Thermally stable device isolation by inert gas heavy ion implantation in AlGaN/GaN HEMTs on Si
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B(2016)
摘要
Multiple energies of heavy ion implantation with inert-gas ion (Kr-84(+)) were carried out on AlGaN/GaN high-electron-mobility transistors (HEMTs) for planar device isolation. Thermal stability of the implantated samples were also investigated by isochronal annealing at 500, 600, 700, and 800 degrees C (each temperature for 1 h.). Due to the damages created by heavy ions (Kr-84(+)) in the GaN lattice, the implant-isolated Al0.27Ga0.73N/GaN HEMT samples exhibited better thermal stability than Ar-40(+)-implant-isolation. This was also confirmed by Rutherford backscattering spectrometry in channeling condition and ultraviolet micro-Raman spectroscopy measurements. With reference to mesa-isolated AlGaN/GaN HEMTs, the buffer breakdown voltage is also stable in the implant-isolated AlGaN/GaN HEMTs. An enhanced OFF-state breakdown voltage was also realized in the implant-isolated AlGaN/GaN HEMTs. The inert gas heavy ion implantation (Kr-84(+)) is a viable solution for the fabrication of thermally stable planar AlGaN/GaN HEMTs even up to 800 degrees C under long-term isochronal annealing. (C) 2016 American Vacuum Society.
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