Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets in a NAND Flash Memory

Dakai Chen,Edward P. Wilcox,Raymond L. Ladbury,Hak S. Kim,Anthony M. Phan,Christina M. Seidleck,Kenneth A. LaBel

IEEE Transactions on Nuclear Science（2017）

引用 17|浏览46

暂无评分

摘要

We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found that the single-event upset (SEU) cross section varied inversely with cumulative fluence. We attribute the effect to the variable upset sensitivities of the memory cells. Furthermore, the effect impacts only single cell upsets in general. The rate of multiple-bit upsets remained relatively consta...

查看译文

关键词

Radiation effects,Flash memories,Single event upsets,Testing,Microcontrollers,Sensitivity

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要