Experimental Study and Device Design of NO, NO 2 , and NH 3 Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT

IEEE Sensors Journal(2016)

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摘要
We report an AlGaN/GaN HEMT gas sensor designed to enable NO, NO2, and NH3 detection from 100 °C-400 °C over a large concentration range. Device modeling is performed to optimize several HEMT device parameters for sensing, and the experimental results show that the optimized sensor has improved performance compared with the previously reported HEMT sensors. The device shows significant no sensitiv...
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关键词
HEMTs,Aluminum gallium nitride,Wide band gap semiconductors,Logic gates,Sensitivity,Sensor phenomena and characterization
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