Growth of high quality Mg-doped GaAs by molecular beam epitaxy and its properties

The high quality GaAs epitaxial layers with various Mg doping levels were grown by molecular beam epitaxy (MBE) by changing substrate temperature and III/V beam equivalent pressure (BEP) ratio. The carrier concentration and mobility obtained from room temperature Hall measurement are of 2 x 10(15) similar to 1.2 x 10(20) cm(-3) and 239 similar to 11cm(2)/V.sec, respectively. During growth of GaAs epitaxial layer, the reflection high-energy electron diffraction (RHEED) pattern showed streaky line regardless of doping level. From the photoluminescence (PL) spectra, band to acceptor transitions (e - A) are dominant at 10 K and its ionization energy is 27.6 meV. The high-resolution x-ray diffraction measurements (DCXRD) with different carrier concentration showed high structural quality. This is the first, observation for high quality GaAs epitaxial layer grown by MBE even at high Mg doping level.