Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors

Applied Physics Letters, pp. 0416022016.

Cited by: 0|Bibtex|Views1|DOI:https://doi.org/10.1063/1.4959831
Other Links: academic.microsoft.com

Abstract:

Ohmic contacts fabricated by regrowth of n+ GaN are favorable alternatives to metal-stack-based alloyed contacts in GaN-based high electron mobility transistors. In this paper, the influence of reactive ion dry etching prior to regrowth on the contact resistance in AlGaN/GaN devices is discussed. We demonstrate that the dry etch condition...More

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