Maximizing Cubic Phase Gallium Nitride Surface Coverage On Nano-Patterned Silicon (100)

Here we investigate the hexagonal-to-cubic phase transition in metalorganic-chemical-vapordeposition- grown gallium nitride enabled via silicon (100) nano-patterning. Electron backscatter diffraction and depth-resolved cathodoluminescence experiments show complete cubic phase GaN surface coverage when GaN deposition thickness (h(c)), etch depth (t(d)), and opening width (p) obey hc approximate to 1: 06p - 0: 75t(d); in line with a geometrical model based on crystallography. Cubic GaN uniformity is studied via electron backscatter diffraction and cathodoluminescence measurements. Atomic force microscopy reveals a smooth cubic GaN surface. Phase-transition cubic GaN shows promising optical and structural quality for integrated photonic devices. Published by AIP Publishing.