Maximizing cubic phase gallium nitride surface coverage on nano-patterned silicon (100)

Applied Physics Letters, pp. 0421032016.

Cited by: 0|Bibtex|Views0|DOI:https://doi.org/10.1063/1.4960005
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Abstract:

Here we investigate the hexagonal-to-cubic phase transition in metalorganic-chemical-vapor-deposition-grown gallium nitride enabled via silicon (100) nano-patterning. Electron backscatter diffraction and depth-resolved cathodoluminescence experiments show complete cubic phase GaN surface coverage when GaN deposition thickness ( hc), etch ...More

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