Finite Element Analysis of Fabrication- and Operation-Induced Mechanical Stress in AlGaN/GaN Transistors
IEEE Transactions on Semiconductor Manufacturing, pp. 349-354, 2016.
Mechanical stress is an important factor influencing the performance and reliability of GaN-based devices. In highly piezoelectric materials like AlGaN/GaN, mechanical stress directly influences the piezoelectric polarization, and hence the charge density of the 2-D electron gas. Fabrication processes for devices as well as device operati...More
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