Finite Element Analysis of Fabrication- and Operation-Induced Mechanical Stress in AlGaN/GaN Transistors

Mechanical stress is an important factor influencing the performance and reliability of GaN-based devices. In highly piezoelectric materials like AlGaN/GaN, mechanical stress directly influences the piezoelectric polarization, and hence the charge density of the 2-D electron gas. Fabrication processes for devices as well as device operating conditions can change the mechanical stress in AlGaN/GaN ...