Finite Element Analysis of Fabrication- and Operation-Induced Mechanical Stress in AlGaN/GaN Transistors

Chuanxin Lian
Chuanxin Lian
Rajesh Baskaran
Rajesh Baskaran
Yan Zhang
Yan Zhang
Allen Hanson
Allen Hanson

IEEE Transactions on Semiconductor Manufacturing, pp. 349-354, 2016.

Cited by: 0|Bibtex|Views0|DOI:https://doi.org/10.1109/TSM.2016.2600593
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Other Links: academic.microsoft.com

Abstract:

Mechanical stress is an important factor influencing the performance and reliability of GaN-based devices. In highly piezoelectric materials like AlGaN/GaN, mechanical stress directly influences the piezoelectric polarization, and hence the charge density of the 2-D electron gas. Fabrication processes for devices as well as device operati...More

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