A Phase Change Memory Cell With Metal Nitride Liner as a Resistance Stabilizer to Reduce Read Current Noise for MLC Optimization

Relatively large noise of phase change material is one of the obstacles for realization of multilevel cell (MLC) using phase change memory (PCM) technology. We experimentally verify that the noise in PCM can be lowered as much as ~4 times by a novel PCM cell which utilizes metal nitride liner to provide an alternative conductive path to the amorphous region with large noise. Program-and-verify (PN...