GaN High-Electron Mobility Transistor Track-and-Hold Sampling Circuit With Over 100-dB Signal-to-Noise Ratio

IEEE Electron Device Letters, pp. 1314-1317, 2016.

Cited by: 0|Bibtex|Views2|DOI:https://doi.org/10.1109/LED.2016.2598806
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Abstract:

A track-and-hold sampling circuit (THSC) fabricated in gallium nitride (GaN) high-electron mobility transistor (HEMT) on silicon carbide substrate is presented for the first time, considering the impact of GaN HEMT memory effects on the sampled signal. A single-transistor GaN track-and-hold sampler with an external gate-bootstrapping samp...More

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