A Novel Varying-Bias Read Scheme for MLC and Wide Temperature Range TMO ReRAM

IEEE Electron Device Letters, pp. 1426-1429, 2016.

Cited by: 0|Bibtex|Views20|DOI:https://doi.org/10.1109/LED.2016.2606515
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Abstract:

Resistance of transition metal oxide (TMO) resistive random access memory (ReRAM) depends sharply on temperature, resulting in drastic memory window loss at high temperature. Thus, it is difficult to design the ReRAM that can serve a wide range of operating conditions. It is especially challenging to achieve multi-level-cell (MLC) ReRAM b...More

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