Precision Measurements of Quantum Hall Resistance Plateau in Doping-Controlled Graphene Device

We report preliminary results of precision measurements of the graphene quantum Hall resistance plateau value with respect to magnetic field, temperature and applied current. Resistance value of SiC graphene Hall device was modulated by chemical doping, heating, and UV irradiation at the ambient condition. Precision measurements for Rh (filing factor v = 2) were then performed with a cryogenic current comparator resistance bridge. Relative deviation from R H (v = 2) less than 30 parts in 10 9 can be achieved down to 7 T of magnetic field and up to 6 K of temperature with driving current of 19. 37 μA.