A Monte Carlo simulation method to predict large-density NAND product memory window from small-array test element group (TEG) verified on a 3D NAND Flash test chip

We developed a Monte Carlo simulation method to accurately predict the large-density NAND flash product memory window based on several device parameters collected in the small-array test element group (TEG). The required parameters include the ISPP slope, intrinsic Vt distribution sigma, program noise, random telegraph noise (RTN), and va...More