A Monte Carlo simulation method to predict large-density NAND product memory window from small-array test element group (TEG) verified on a 3D NAND Flash test chip

symposium on vlsi technology, pp. 1-2, 2016.

Cited by: 0|Bibtex|Views18|DOI:https://doi.org/10.1109/VLSIT.2016.7573386
Other Links: academic.microsoft.com

Abstract:

We developed a Monte Carlo simulation method to accurately predict the large-density NAND flash product memory window based on several device parameters collected in the small-array test element group (TEG). The required parameters include the ISPP slope, intrinsic Vt distribution sigma, program noise, random telegraph noise (RTN), and va...More

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