A Monte Carlo simulation method to predict large-density NAND product memory window from small-array test element group (TEG) verified on a 3D NAND Flash test chip
symposium on vlsi technology, pp. 1-2, 2016.
We developed a Monte Carlo simulation method to accurately predict the large-density NAND flash product memory window based on several device parameters collected in the small-array test element group (TEG). The required parameters include the ISPP slope, intrinsic Vt distribution sigma, program noise, random telegraph noise (RTN), and va...More
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