Ultra-low NMOS contact resistivity using a novel plasma-based DSS implant and laser anneal for post 7 nm nodes

S. Tang
S. Tang
Kelly E Hollar
Kelly E Hollar
Xuebin Li
Xuebin Li
Miao Jin
Miao Jin
J. Y. Lee
J. Y. Lee

symposium on vlsi technology, pp. 1-2, 2016.

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Abstract:

We report a record-setting low NMOS contact resistivity of 1.2×10 −9 Ωcm 2 compatible with Ti/Si system and dopant segregation Schottky (DSS) based solution. The ultra-low contact resistivity of Ti/Si system is demonstrated with Highly Doped Si:P Epi layer and P implantation using conformal plasma implant followed by millisecond laser a...More

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