Ultra-low NMOS contact resistivity using a novel plasma-based DSS implant and laser anneal for post 7 nm nodes
symposium on vlsi technology, pp. 1-2, 2016.
We report a record-setting low NMOS contact resistivity of 1.2×10 −9 Ωcm 2 compatible with Ti/Si system and dopant segregation Schottky (DSS) based solution. The ultra-low contact resistivity of Ti/Si system is demonstrated with Highly Doped Si:P Epi layer and P implantation using conformal plasma implant followed by millisecond laser a...More
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