Re-examination the effects of selenium segregation on the Schottky barrier height reduction of the NiGe/Ge contact

Yi-Ju Chen,Hung-Ju Chou,Ching-I. Li,Bing-Yue Tsui

2016 IEEE Silicon Nanoelectronics Workshop (SNW)（2016）

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摘要

Effect of selenium segregation on the Schottky barrier height of the NiGe/Ge interface is examined. By carefully designed experiments, ion implantation damages in Ge can be avoided so that the pure effect of Se segregation can be examined. The best result achieved in this work is 0.1 eV barrier height reduction. A 10 times contact resistivity reduction is expected.

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关键词

selenium segregation,Schottky barrier height reduction,ion implantation damage,contact resistivity reduction,NiGe-Ge

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