Serially connected monolayer MoS 2 FETs with channel patterned by a 7.5 nm resolution directed self-assembly lithography

symposium on vlsi technology, pp. 1-2, 2016.

Cited by: 0|Bibtex|Views0|DOI:https://doi.org/10.1109/VLSIT.2016.7573376
Other Links: academic.microsoft.com

Abstract:

We demonstrate sub-10 nm transistor channel lengths by directed self-assembly patterning of monolayer MoS 2 in a periodic chain of homojunction semiconducting-(2H) and metallic-phase (1Tu0027) MoS 2 regions with half-pitch of 7.5 nm. The MoS 2 composite transistor possesses an off-state current of 100 pA/µm and an I on /I off ratio in...More

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