Serially connected monolayer MoS 2 FETs with channel patterned by a 7.5 nm resolution directed self-assembly lithography
symposium on vlsi technology, pp. 1-2, 2016.
We demonstrate sub-10 nm transistor channel lengths by directed self-assembly patterning of monolayer MoS 2 in a periodic chain of homojunction semiconducting-(2H) and metallic-phase (1Tu0027) MoS 2 regions with half-pitch of 7.5 nm. The MoS 2 composite transistor possesses an off-state current of 100 pA/µm and an I on /I off ratio in...More
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