Fabrication of Colloidal InGaN/GaN Quantum Dots from Epitaxially Grown Quantum Wells
NANOSCIENCE AND NANOTECHNOLOGY LETTERS(2016)
摘要
GaN colloidal quantum dots (QDs) containing InGaN multiple-quantum wells were fabricated by using electrochemical etching to lift-off nanocrystals from a substrate. The QDs were characterized by photoluminescence, which exhibited strong single-peak emission and significant blue-shift. This study enabled the construction of high-quality versatile heterojunctions in a colloidal QD for improved efficiency and functionality.
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关键词
Colloidal Quantum Dot,InGaN,Lift-Off,Photoluminescence
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