Schottky Barrier Thin Film Transistor (SB-TFT) on low-temperature polycrystalline silicon
Solid-State Electronics(2016)
摘要
•Schottky barrier field effect transistors on polycrystalline silicon are proposed.•Vt and SS comparable with similar MOS TFT reported in literature.•Low thermal budget process, compatible with polymeric substrates.•Cheaper and scalable alternative to transistors with doped source and drain.
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关键词
Schottky barrier FET,Thin film transistor,Polycrystalline silicon
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