Deep Electron Traps Responsible for Higher Quantum Efficiency in Improved GaN/InGaN Light Emitting Diodes Embedded with SiO2 Nanoparticles

A. V. Turutin
A. V. Turutin
I. V. Shemerov
I. V. Shemerov
E. S. Kondratyev
E. S. Kondratyev

ECS Journal of Solid State Science and Technology, 2016.

Cited by: 0|Bibtex|Views1|DOI:https://doi.org/10.1149/2.0051612jss
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