Thermal resistance optimization of GaN/substrate stacks considering thermal boundary resistance and temperature-dependent thermal conductivity

Here, we investigate the effects of thermal boundary resistance (TBR) and temperature-dependent thermal conductivity on the thermal resistance of GaN/substrate stacks. A combination of parameters such as substrates {diamond, silicon carbide, silicon, and sapphire}, thermal boundary resistance {10–60 m2K/GW}, heat source lengths {10 nm–20 ...More