Thermal resistance optimization of GaN/substrate stacks considering thermal boundary resistance and temperature-dependent thermal conductivity

Kihoon Park
Kihoon Park

Applied Physics Letters, pp. 1519042016.

Cited by: 0|Bibtex|Views3|DOI:https://doi.org/10.1063/1.4964711
Other Links: academic.microsoft.com

Abstract:

Here, we investigate the effects of thermal boundary resistance (TBR) and temperature-dependent thermal conductivity on the thermal resistance of GaN/substrate stacks. A combination of parameters such as substrates {diamond, silicon carbide, silicon, and sapphire}, thermal boundary resistance {10–60 m2K/GW}, heat source lengths {10 nm–20 ...More

Code:

Data:

Your rating :
0

 

Tags
Comments