Growth and Implementation of Carbon-Doped AlGaN Layers for Enhancement-Mode HEMTs on 200 mm Si Substrates

Jie Su
Jie Su
Dirk Wellekens
Dirk Wellekens
Yoga Saripalli
Yoga Saripalli

Journal of Electronic Materials, pp. 6346-6354, 2016.

Cited by: 0|Bibtex|Views0|DOI:https://doi.org/10.1007/s11664-016-5029-9
Other Links: academic.microsoft.com|link.springer.com

Abstract:

We are reporting the growth of AlGaN based enhancement-mode high electron mobility transistors (HEMTs) on 200 mm silicon (111) substrates using a single wafer metalorganic chemical vapor deposition reactor. It is found that TMAl pre-dosing conditions are critical in controlling the structural quality, surface morphology, and wafer bow of ...More

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