Titanium Silicide on Si:P With Precontact Amorphization Implantation Treatment: Contact Resistivity Approaching $1 \times 10^{-9}$ Ohm-cm2
IEEE Transactions on Electron Devices(2016)
摘要
In recent CMOS technology, extreme shrinking of contact area at source/drain regions raises serious concerns of high metal/semiconductor contact resistance. Confronting this problem, we introduce a precontact amorphization implantation plus Ti silicidation technique (PCAI + TiSix) and achieve ultralow contact resistivity (ρc) of (1.3 - 1.5) × 10-9 Ω · cm2 on Si:P. This PCAI + TiSix technique utili...
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关键词
Silicides,Titanium compounds,Silicidation,Conductivity,Silicon,Resistance,CMOS technology
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