Total Ionizing Dose (TID) Effects in Ultra-Thin Body Ge-on-Insulator (GOI) Junctionless CMOSFETs With Recessed Source/Drain and Channel
IEEE Transactions on Nuclear Science(2017)
摘要
Total ionizing dose (TID) effects in ultra-thin body Ge on Insulator (GOI) junctionless CMOSFETs with recessed source/drain and channel have been studied. 10-keV X-ray irradiation leads to net hole trapping at the top and bottom Ge/dielectric interfaces of both GOI NFETs and PFETs. The Ge channel thickness and post-oxidation processing can strongly affect the radiation response. Application of neg...
更多查看译文
关键词
Logic gates,Charge carrier processes,Radiation effects,Threshold voltage,Aluminum oxide,Substrates,CMOSFETs
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络