MoS2 Field-Effect Transistor with Sub-10 nm Channel Length
Nano Letters, pp. 7798-7806, 2016.
Atomically thin molybdenum disulfide (MoS2) is an ideal semiconductor material for field-effect transistors (FETs) with sub-10 nm channel lengths. The high effective mass and large bandgap of MoS2 minimize direct source–drain tunneling, while its atomically thin body maximizes the gate modulation efficiency in ultrashort-channel transisto...More
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