MoS2 Field-Effect Transistor with Sub-10 nm Channel Length

Nano Letters, pp. 7798-7806, 2016.

Cited by: 0|Bibtex|Views1|DOI:https://doi.org/10.1021/acs.nanolett.6b03999
Other Links: academic.microsoft.com

Abstract:

Atomically thin molybdenum disulfide (MoS2) is an ideal semiconductor material for field-effect transistors (FETs) with sub-10 nm channel lengths. The high effective mass and large bandgap of MoS2 minimize direct source–drain tunneling, while its atomically thin body maximizes the gate modulation efficiency in ultrashort-channel transisto...More

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