A Comprehensive Characterization Method for Lateral Profiling of Interface Traps and Trapped Charges in P-SONOS Cell Devices
IEEE Transactions on Device and Materials Reliability(2017)
摘要
A comprehensive characterization method has been developed in this paper for reliable lateral profiling of the interface traps (ANit), localized charges (ANot), and trapped holes (ANhole) in P-SONOS cell devices. Charge pumping current (ICP) measurement can be used to probe ANit and ANot from the increase of maximum ICP (ICP,max) and the shift of ICP curve along the base level voltage (Vb). When i...
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关键词
Erbium,SONOS devices,Electron traps,Logic gates,Tunneling,Reliability
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