V-Oc Overestimation From Photoluminescence Quantum Yield In Disordered Absorber Layers
photovoltaic specialists conference(2016)
摘要
We report the enhancement of photoluminescence quantum yield (PLQY) by sub-bandgap absorption and emission (for materials with PLQY below the radiative limit) as well as the complications that arise from using radiative efficiency to evaluate potential solar cell performance. When ideal step absorptivity is used to analyze PLQY in the presence of band tails, there is an overestimation in open circuit voltage that can reach magnitudes of 80mV in disordered materials. We present a simple technique to extract open circuit voltage from PLQY with band tails that is contact-free and amenable to rapid screening of materials.
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关键词
open circuit voltage overestimation,photoluminescence quantum yield,subbandgap absorption,subbandgap emission,disordered absorber layers,radiative limit,radiative efficiency,solar cell performance,band tails,Cu(InGa)(SSe)2
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