Effect of Purcell Enhancement on Internal Quantum Efficiency of InGaN Green Light-Emitting Diode Structures
Frontiers in Optics（2016）
摘要
We theoretically investigate the modification of internal quantum efficiency (IQE) in InGaN green flip-chip LED structures as a result of the Purcell effect that is found to be quite advantageous for improving the IQE InGaN green LEDs.
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关键词
internal quantum efficiency,purcell enhancement,diode,light-emitting
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