Numerical Simulation for Operation of Flexible Thin-Film Transistors With Bending

IEEE Electron Device Letters(2017)

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摘要
We theoretically study the change of the performance characteristics with various mechanical bending conditions for flexible thin-film transistors (TFTs) by two-dimensional device simulation. The characteristics of newly developed flexible TFTs with high crystalline quality and high carrier mobility are more sensitive to the degree of bending. We developed a model to estimate the change in the cha...
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关键词
Thin film transistors,Silicon,Threshold voltage,Two dimensional displays,Electric fields,Logic gates
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