Sub-Micron Gate Length Field Effect Transistors as Broad Band Detectors of Terahertz Radiation

We report on room temperature non-resonant detection of terahertz radiation using strained Silicon MODFETs with nanoscale gate lengths. The devices were excited at room temperature by an electronic source at 150 and 300 GHz. A maximum intensity of the photoresponse signal was observed around the threshold voltage. Results from numerical simulations based on synopsys TCAD are in agreement with experimental ones. The NEP and Responsivity were calculated from the photoreponse signal obtained experimentally. Those values are competitive with the commercial ones. A maximum of photoresponse was obtained (for all devices) when the polarization of the incident terahertz radiations was in parallel with the fingers of the gate pads. For applications, the device was used as a sensor within a terahertz imaging system and its ability for inspection of hidden objects was demonstrated.