Investigation of structural, optical, and electrical characteristics of an AlGaN/GaN high electron mobility transistor structure across a 200 mm Si(1 1 1) substrate

J. Perozek
J. Perozek
H. P. Lee
H. P. Lee
Balakrishnan Krishnan
Balakrishnan Krishnan
Ajit Paranjpe
Ajit Paranjpe

Journal of Physics D, pp. 0551032017.

Cited by: 1|Bibtex|Views5|DOI:https://doi.org/10.1088/1361-6463/aa5208
Other Links: academic.microsoft.com

Abstract:

An AlGaN/GaN high electron mobility transistor (HEMT) structure is grown on a 200 mm Si(1 1 1) substrate. The AlGaN/AlN/GaN heterostructure atop, which forms the 2D electron gas, is studied via transmission electron microscopy (TEM), scanning tunneling microscopy, and TEM chemical analysis. To quantify the uniformity of structural, optica...More

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