Combined Electrical Transport And Capacitance Spectroscopy Of A Mos2-Linbo3 Field Effect Transistor

We have measured both the current-voltage (I-SD-V-GS) and capacitance-voltage (C-V-GS) characteristics of a MoS2-LiNbO3 field effect transistor. From the measured capacitance, we calculate the electron surface density and show that its gate voltage dependence follows the theoretical prediction resulting from the two-dimensional free electron model. This model allows us to fit the measured I-SD-V-GS characteristics over the entire range of V-GS. Combining this experimental result with the measured current-voltage characteristics, we determine the field effect mobility as a function of gate voltage. We show that for our device, this improved combined approach yields significantly smaller values (more than a factor of 4) of the electron mobility than the conventional analysis of the current-voltage characteristics only. Published by AIP Publishing.