An Investigation of the Optical and Structural Properties of PECVD A-Sih Thin Films Grown on a Porous Anodic Aluminum Template

Hydrogenated amorphous silicon (a-Si:H) films are deposited by PECVD technique, varying the substrate temperature from 100 degrees C to 250 degrees C, on porous anodic aluminum (PAI) layers. A combination of micro Raman, X-ray photoelectron, Fourier transform infrared spectroscopies, atomic force and scanning/ transmission electron microscopies analyses have shown that the optical properties of the a-Si:H films depend on the substrate temperature and mainly on the homogeneous nanoporous structure of the PAl layers on which the a-Si:H films were grown. (C) 2017 Elsevier B.V. All rights reserved.