Improved Electrical Performance of Multilayer MoS 2 Transistor With NH 3 -Annealed ALD HfTiO Gate Dielectric

The carrier mobility of MoS2 transistors can be greatly improved by the screening effect of high-k gate dielectric. Therefore, in this paper, atomic layer deposited HfTiO annealed in different ambients (N2, O2, and NH3) is used to replace SiO2 as gate dielectric for fabricating back-gated multilayer MoS2 transistors. As a result, excellent electrical properties are achieved for the sample annealed...