High-yield large area MoS2 technology: Material, device and circuits co-optimization
2016 IEEE International Electron Devices Meeting (IEDM)(2016)
摘要
Two-dimensional electronics based on single-layer (SL) MoS
2
offers significant advantages for realizing large-scale flexible systems owing to the ultrathin nature, good transport properties and stable crystalline structure of MoS
2
. However, the reported devices and circuits based on this material have low yield because of various variation sources inherent to the growth and fabrication technology. In this work, we develop a variation-aware design flow and yield model to evaluate the MoS
2
technology and provide a guideline for the co-optimization of the material, devices and circuits. Test chips with various inverters and basic logic gates (such as NAND and XOR) are fabricated as demonstration of the close-to-unit yield of the proposed technology platform.
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关键词
high-yield large area MoS2 technology,material-device-circuit cooptimization,two-dimensional electronics,single-layer MoS2,large-scale flexible systems,transport properties,crystalline structure,variation-aware design flow,inverters,logic gates,NAND gates,XOR gates,MoS2
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