Novel GaN trench MIS barrier Schottky rectifiers with implanted field rings
international electron devices meeting, 2016.
We demonstrate a novel GaN vertical Schottky rectifier with trench MIS structures and trench field rings. The new structure greatly enhanced the reverse blocking characteristics while maintaining a Schottky-like good forward conduction. The reverse leakage current improved beyond 10 4 -fold and the breakdown voltage increased from 400 V t...More
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