Novel GaN trench MIS barrier Schottky rectifiers with implanted field rings
2016 IEEE International Electron Devices Meeting (IEDM)(2016)
摘要
We demonstrate a novel GaN vertical Schottky rectifier with trench MIS structures and trench field rings. The new structure greatly enhanced the reverse blocking characteristics while maintaining a Schottky-like good forward conduction. The reverse leakage current improved beyond 10
4
-fold and the breakdown voltage increased from 400 V to 700 V, while the low turn-on voltage (0.8 V) and on-resistance (2 mΩ·cm
2
) were retained. High-temperature operation up to 250°C and fast switching performance were also demonstrated. This new device shows great potential for high-power and high-frequency applications.
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关键词
breakdown voltage,reverse leakage current,Schottky-like good forward conduction,trench field rings,trench MIS structures,vertical Schottky rectifiers,voltage 400 V to 700 V,voltage 0.8 V,GaN
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