Fully Integrated Digitally Assisted Low-Dropout Regulator for a NAND Flash Memory System
IEEE Transactions on Power Electronics(2018)
摘要
In this paper, a fully integrated digitally assisted low-dropout regulator (LDO) for a NAND flash memory system is proposed and verified using 500 nm I/O CMOS transistors. By combining an amplifier (AMP)-based LDO with a comparator (CMP)-based LDO, the proposed LDO achieves both fast load response in the transient state and accurate regulation in the steady state, which are advantages of the CMP-b...
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关键词
Transient response,Capacitors,Transient analysis,Voltage control,Transistors,Regulators,Flash memories
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