Impact of Short-Wavelength and Long-Wavelength Line-Edge Roughness on the Variability of Ultrascaled FinFETs

We examine the impact of line-edge roughness (LER) on the variability in the on-current and saturation threshold voltage of ultrascaled FinFET devices via quantum-mechanical transport simulation. We obtain a realistic model of LER by decomposing the LER into short-λ and long-λ fluctuations, and we consider their separate influences on device performance. We show that the long-λ fluctuations lead t...