Fin-Width Effects on Characteristics of InGaAs-Based Independent Double-Gate FinFETs

We report the characteristics of InGaAs-based independent double-gate FinFETs with Al2O3/LaAlO3 as gate dielectric. The device can be operated in three different modes (i.e., single-, double-, and independent double-gate) made possible by the physically separated two sidewall gates. When the device is operated in the double-gate mode, it exhibits better performance in terms of the On/Off current r...