Fast-IV Measurement Investigation of the Role of TiN Gate Nitrogen Concentration on Bulk Traps in HfO 2 Layer in p-MOSFETs

Ying-Hsin Lu,Ting-Chang Chang,Jih-Chien Liao,Li-Hui Chen,Yu-Shan Lin,Ching-En Chen,Kuan-Ju Liu,Xi-Wen Liu,Chien-Yu Lin,Chen-Hsin Lien,Tseung-Yuen Tseng,Osbert Cheng,Cheng-Tung Huang,Wei-Ting Yen

IEEE Transactions on Device and Materials Reliability（2017）

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摘要

This letter investigates the role of the TiN gate's nitrogen concentration on bulk traps in the HfO2 layer in p-MOSFETs using fast I -V measurement. During negative bias temperature instability, the holes trapped in the HfO2 layer will induce Vth degradation. The fast I -V double sweep confirms the holes are trapped in process-related pre-existing defects. These defects are interstitial-type, infl...

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关键词

Nitrogen,Hafnium compounds,Logic gates,Negative bias temperature instability,Thermal variables control,Tin,Velocity measurement

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