Interfacial characteristics of Y2O3/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition

Y.H. Lin,K.Y. Lin,Wei-Jen Hsueh,L.B. Young,T.W. Chang,J.-I. Chyi,T.W. Pi,J. Kwo,M. Hong

Journal of Crystal Growth（2017）

引用 5|浏览9

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摘要

•MBE- and ALD-Y2O3 effectively passivate GaSb(001) with a Dit of low 1012cm−2eV−1.•Stoichiometric Sb2O5, Sb2O4 in MBE-Y2O3/GaSb, but Sb2Ox (x<4) in ALD-Y2O3/GaSb.•More GaOx at MBE-Y2O3/GaSb interface with growth temperature from RT to 200°C.•Better interface in MBE-Y2O3/GaSb while better bulk oxide qualities in ALD-Y2O3/GaSb.

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关键词

A3. Molecular beam epitaxy,A3. Atomic layer deposition,B1. Antimonides,B2. Sb-based semiconductors

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