Control of interlayer delocalization in 2H transition metal dichalcogenides

Kuang-Chung Wang
Kuang-Chung Wang
Teodor K. Stanev
Teodor K. Stanev
Daniel Valencia
Daniel Valencia
Alex Henning
Alex Henning
Aritra Lahiri
Aritra Lahiri
Daniel Mejia
Daniel Mejia
Aryan Afzalian
Aryan Afzalian

arXiv: Mesoscale and Nanoscale Physics, 2017.

Cited by: 1|Views12

Abstract:

It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures show electrons and holes to either localize in individual monolayers, or delocalize beyond multiple la...More

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