Control of interlayer delocalization in 2H transition metal dichalcogenides
arXiv: Mesoscale and Nanoscale Physics, 2017.
Abstract:
It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures show electrons and holes to either localize in individual monolayers, or delocalize beyond multiple la...More
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