Directed self-assembly patterning strategies for phase change memory applications

Robert L. Bruce
Robert L. Bruce
Gloria Fraczak
Gloria Fraczak
John Papalia
John Papalia
Matt BrightSky
Matt BrightSky
Koukou Suu
Koukou Suu

ADVANCED ETCH TECHNOLOGY FOR NANOPATTERNING VI, 2017.

被引用0|引用|浏览24|DOI:https://doi.org/10.1117/12.2257829
其它链接academic.microsoft.com

摘要

Phase change material (PCM)-based memory cells have shown promise as an enabler for low power, high density memory. There is a current need to develop and improve patterning strategies to attain smaller device dimensions. In this work, two methods of patterning of PCM device structures was achieved using directed self-assembly (DSA) patte...更多

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