Directed self-assembly patterning strategies for phase change memory applications
ADVANCED ETCH TECHNOLOGY FOR NANOPATTERNING VI, 2017.
摘要：
Phase change material (PCM)-based memory cells have shown promise as an enabler for low power, high density memory. There is a current need to develop and improve patterning strategies to attain smaller device dimensions. In this work, two methods of patterning of PCM device structures was achieved using directed self-assembly (DSA) patte...更多
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