Sidewall electrode TiO x /TiO x N y resistive random access memory with excellent memory window control and reliability using plasma oxidation and a novel degradation-detecting writing algorithm
Japanese Journal of Applied Physics, 2017.
A TiO x /TiO x N y resistive random access memory (ReRAM) with a sidewall bottom electrode (BE) is demonstrated for the first time. Several interesting characteristics that are very desirable for high reliability memory applications are observed: (1) a stable RESET and SET resistance switching window even without write verification, (2) g...More
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