Planar-Nanostrip-Channel InAlN/GaN HEMTs on Si With Improved ${g}_{{m}}$ and ${f}_{\textsf {T}}$ Linearity

In this letter, we report an InAlN/GaN high electron mobility transistor (HEMT) with a planar nanostrip channel design to improve its transconductance gm and cutoff frequency fT linearity. The planar nanostrips were formed by partial arsenic ion implantation isolation in the channel under the gate. Devices with a gate length (Lg) of 80 nm and a source-to-drain distance (Lsd) of 1 μm were fabricate...