Investigation of Junction-less Tunneling Field Effect Transistor (JL-TFET) with Floating Gate

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, pp. 156-161, 2017.

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摘要

This work presents a novel structure for junction-less tunneling field effect transistor (JLTFET) with a floating gate over the source region. Introduction of floating gate instead of fixed metal gate removes the limitation of fabrication process suitability. The proposed device is based on a heavily n-type-doped Si-channel junction-less ...更多

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