Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition
Solid-state Electronics, pp. 10-16, 2017.
Abstract An N-rich silicon nitride film, with a lower refractive index (RI) than the stoichiometric silicon nitride (RI = 2.01), was deposited by alternating the exposure of dichlorosilane (DCS, SiH 2 Cl 2 ) and that of ammonia (NH 3 ) in a plasma-enhanced atomic layer deposition (PEALD) process. In this process, the plasma ammonia was ...More
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