Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition

Solid-state Electronics, pp. 10-16, 2017.

Cited by: 0|Bibtex|Views5|DOI:https://doi.org/10.1016/j.sse.2017.04.005
Other Links: academic.microsoft.com

Abstract:

Abstract An N-rich silicon nitride film, with a lower refractive index (RI) than the stoichiometric silicon nitride (RI = 2.01), was deposited by alternating the exposure of dichlorosilane (DCS, SiH 2 Cl 2 ) and that of ammonia (NH 3 ) in a plasma-enhanced atomic layer deposition (PEALD) process. In this process, the plasma ammonia was ...More

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