Ge-Doped ${\beta }$ -Ga2O3 MOSFETs

We report on MOSFETs fabricated on Ge-doped β-Ga2O3 homoepitaxial material grown by molecular beam epitaxy on (010) Fe-doped semi-insulating substrates. The Ge-doped channel devices performed similar to previously reported devices with Sn- and Si-doped channels with the drain current ON/OFF ratios of >108 and the saturated drain current of >75 mA/mm at VG = 0 V. Hall effect measurements showed a h...