Some aspects to the understanding of the droplet epitaxial nano-hole formation

Journal of Crystal Growth(2017)

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摘要
•Explanation, why thermal solution cannot be observed under droplet edge.•The surrounded lobe initiative originates from the remained droplet edge.•Explanation, why thermal solution is preferred under the middle of the droplet.•The material transport needs arsenic ambient and not the thermal solution.
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关键词
GaAs,Droplet epitaxy,Nano-ring,Thermal etching
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