Theoretical Study of Ballistic Transport in Silicon Nanowire and Graphene Nanoribbon Field-Effect Transistors Using Empirical Pseudopotentials
IEEE Transactions on Electron Devices(2017)
摘要
We present a theoretical study of the ballistic performance of gate-all-around field-effect transistors (FETs) with channels consisting of armchair-edge graphene nanoribbons (aGNRs) of various widths and silicon nanowires (SiNWs) with square cross sections. We apply an atomistic quantum transport formalism based on empirical pseudopotentials. Our results show that the turn-OFF behavior of aGNRFETs...
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关键词
Logic gates,Photonic band gap,Silicon,Graphene,Field effect transistors,Mathematical model
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