Changes in electron and hole traps in GaN-based light emitting diodes from near-UV to green spectral ranges

Deep electron and hole traps were studied by admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS) with electrical and optical (ODLTS) injection for GaN-based multi-quantum-well (MQW) light emitting diodes (LEDs) operating in the near-UV (385–390 nm), blue (445 nm), and green (515 nm) spectral regions. AS spectra were ...More