Changes in electron and hole traps in GaN-based light emitting diodes from near-UV to green spectral ranges
Applied Physics Letters, pp. 1921072017.
Deep electron and hole traps were studied by admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS) with electrical and optical (ODLTS) injection for GaN-based multi-quantum-well (MQW) light emitting diodes (LEDs) operating in the near-UV (385–390 nm), blue (445 nm), and green (515 nm) spectral regions. AS spectra were ...More
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