Changes in electron and hole traps in GaN-based light emitting diodes from near-UV to green spectral ranges

Applied Physics Letters, pp. 1921072017.

Cited by: 5|Bibtex|Views1|DOI:https://doi.org/10.1063/1.4983556
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Abstract:

Deep electron and hole traps were studied by admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS) with electrical and optical (ODLTS) injection for GaN-based multi-quantum-well (MQW) light emitting diodes (LEDs) operating in the near-UV (385–390 nm), blue (445 nm), and green (515 nm) spectral regions. AS spectra were ...More

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