Trench formation and corner rounding in vertical GaN power devices

Applied Physics Letters, pp. 1935062017.

Cited by: 4|Bibtex|Views6|DOI:https://doi.org/10.1063/1.4983558
Other Links: academic.microsoft.com

Abstract:

Trench formation and corner rounding are the key processes to demonstrate high-voltage trench-based vertical GaN devices. In this work, we developed a damage-free corner rounding technology combining Tetramethylammonium hydroxide wet etching and piranha clean. By optimizing the inductively coupled plasma dry etching conditions and applyin...More

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