Trench formation and corner rounding in vertical GaN power devices
Applied Physics Letters, pp. 1935062017.
Trench formation and corner rounding are the key processes to demonstrate high-voltage trench-based vertical GaN devices. In this work, we developed a damage-free corner rounding technology combining Tetramethylammonium hydroxide wet etching and piranha clean. By optimizing the inductively coupled plasma dry etching conditions and applyin...More
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